FDH055N15A N-channel MOSFET — 150V, 118A, 5.9mΩ, TO-247 power MOSFET G60H65DFB IC Hysteresis voltage (VH): positive and

Hysteresis voltage (VH): positive and negative threshold difference

4GHz wireless coordinator

enabling users to experiment with various sensors

37 GPIO pins in LQFP-48 — more I/O for complex designs

1 seconds timing

FDH055N15A N-channel MOSFET — 150V, 118A, 5.9mΩ, TO-247 power MOSFET G60H65DFB IC Hysteresis voltage (VH): positive andThe FDH055N15A is a high performance N channel power MOSFET in a TO 247 through hole package, rated at 150V drain source voltage and 118A continuous drain current. With an exceptionally low on state resistance of just 5. 9m and a maximum power dissipation of 429W, it is engineered for high efficiency, high current switching applications where conduction losses must be minimised. Its low total gate charge (Qg = 92nC) enables fast switching at high